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FMMT555TC Diodes Incorporated
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FMMT555TC

Bipolar Transistors - BJT PNP Medium Power
Technical Specifications
Transistor Type PNP
Current - Collector (Ic) (Max) 1 A
Voltage - Collector Emitter Breakdown (Max) 150 V
Vce Saturation (Max) @ Ib, Ic 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 50 @ 300mA, 10V
Power - Max 500 mW
Frequency - Transition 100MHz
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Supplier Device Package SOT-23-3
📦 Product Attributes
Packaging Reel
Standard Pack Qty 10000
🔁 Alternate / Replacement Parts
Alternate Packaging FMMT555TA
Suggested Replacement
13,686
Units In Stock
📦 Reel
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🔑 Key Specifications
Category Bipolar Transistors - BJT
RoHS RoHS Compliant
Lifecycle
Lead Time 280 Days (from factory)
📄 Documentation
Datasheet not available
🌐 Compliance & Export
Country / Standard Code
CNHTS 8541210000
CAHTS 8541210000
USHTS 8541210075
JPHTS 854121000
KRHTS 8541219000
TARIC 8541210000
MXHTS 8541210100
ECCN EAR99
Product Overview

Diodes Incorporated's FMMT555TC is a widely used transistors in electronic designs. It features a transistor type of PNP, a current, collector (ic) of 1 A, a voltage, collector emitter breakdown of 150 V, a vce saturation (max) @ ib, ic of 300mV @ 10mA, 100mA, a current, collector cutoff of 100nA (ICBO) and a DC current gain (hfe) (min) @ ic, vce of 50 @ 300mA, 10V. This part has a typical lead time of 280 Days from factory. Simplytronix stocks FMMT555TC for same-day shipping with genuine parts guaranteed.

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