*For representation only.
DXTP03200BP5-13
Diodes Incorporated
Active
Bipolar Transistors - BJT 200V PNP High Volt Vceo -200V 3.2W
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Technical Specifications
| Transistor Type | PNP |
| Current - Collector (Ic) (Max) | 2 A |
| Voltage - Collector Emitter Breakdown (Max) | 200 V |
| Vce Saturation (Max) @ Ib, Ic | 275mV @ 400mA, 2A |
| Current - Collector Cutoff (Max) | 50nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 1A, 5V |
| Power - Max | 3.2 W |
| Frequency - Transition | 105MHz |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | PowerDI™ 5 |
| Supplier Device Package | PowerDI™ 5 |
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Product Attributes
| Packaging | Reel |
| Standard Pack Qty | 5000 |
3,942
Units In Stock
📦 Reel
- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
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Key Specifications
| Category | Bipolar Transistors - BJT |
| RoHS | RoHS Compliant |
| Lifecycle | |
| Lead Time | 280 Days (from factory) |
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Documentation
⬇ Download Datasheet
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Compliance & Export
| Country / Standard | Code |
|---|---|
| CNHTS | 8541290000 |
| CAHTS | 8541290000 |
| USHTS | 8541290055 |
| JPHTS | 8541290100 |
| KRHTS | 8541299000 |
| TARIC | 8541290000 |
| MXHTS | 85412999 |
| ECCN | EAR99 |
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Product Overview
Manufactured by Diodes Incorporated, the DXTP03200BP5-13 is classified as a transistors. Key specifications include a transistor type of PNP, a current, collector (ic) of 2 A, a voltage, collector emitter breakdown of 200 V, a vce saturation (max) @ ib, ic of 275mV @ 400mA, 2A, a current, collector cutoff of 50nA (ICBO) and a DC current gain (hfe) (min) @ ic, vce of 100 @ 1A, 5V. This part has a typical lead time of 280 Days from factory and ships with a full manufacturer datasheet available for download. Order DXTP03200BP5-13 from Simplytronix for authenticated stock and same-day order processing.
