*For representation only.
DXTN80060DFGQ-7
Diodes Incorporated
Active
Bipolar Transistors - BJT Pwr Low Sat Transistor PowerDI3333-8/SWP T&R 2K
⚙
Technical Specifications
| Transistor Type | NPN |
| Current - Collector (Ic) (Max) | 6.5 A |
| Voltage - Collector Emitter Breakdown (Max) | 60 V |
| Vce Saturation (Max) @ Ib, Ic | 200mV @ 650mA, 6.5A |
| Current - Collector Cutoff (Max) | 300nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 300 @ 100mA, 2V |
| Power - Max | 2.4 W |
| Frequency - Transition | 140MHz |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Grade | Automotive |
| Qualification | AEC-Q101 |
| Mounting Type | Surface Mount, Wettable Flank |
| Package / Case | 8-PowerVDFN |
| Supplier Device Package | PowerDI3333-8 (SWP) Type UX |
📦
Product Attributes
| Packaging | Reel |
| Standard Pack Qty | 2000 |
935
Units In Stock
📦 Reel
- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
🔑
Key Specifications
| Category | Bipolar Transistors - BJT |
| RoHS | RoHS Compliant |
| Lifecycle | New Product |
| Lead Time | 280 Days (from factory) |
📄
Documentation
Datasheet not available
🌐
Compliance & Export
| Country / Standard | Code |
|---|---|
| CNHTS | 8541290000 |
| CAHTS | 8541290000 |
| USHTS | 8541290055 |
| JPHTS | 854129000 |
| KRHTS | 8541299000 |
| TARIC | 8541290000 |
| MXHTS | 8541299900 |
| ECCN | EAR99 |
ℹ
Product Overview
DXTN80060DFGQ-7 is a transistors manufactured by Diodes Incorporated. Notable characteristics of this part include a transistor type of NPN, a current, collector (ic) of 6.5 A, a voltage, collector emitter breakdown of 60 V, a vce saturation (max) @ ib, ic of 200mV @ 650mA, 6.5A, a current, collector cutoff of 300nA and a DC current gain (hfe) (min) @ ic, vce of 300 @ 100mA, 2V. This part has a typical lead time of 280 Days from factory. Simplytronix stocks DXTN80060DFGQ-7 for same-day shipping with genuine parts guaranteed.
