*For representation only.
DXTN80030DFGQ-7
Diodes Incorporated
Active
Bipolar Transistors - BJT Pwr Low Sat Transistor PowerDI3333-8/SWP T&R 2K
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Technical Specifications
| Transistor Type | NPN |
| Current - Collector (Ic) (Max) | 10 A |
| Voltage - Collector Emitter Breakdown (Max) | 30 V |
| Vce Saturation (Max) @ Ib, Ic | 160mV @ 500mA, 10A |
| Current - Collector Cutoff (Max) | 300nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 300 @ 100mA, 2V |
| Power - Max | 2.4 W |
| Frequency - Transition | 130MHz |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Grade | Automotive |
| Qualification | AEC-Q101 |
| Mounting Type | Surface Mount, Wettable Flank |
| Package / Case | 8-PowerVDFN |
| Supplier Device Package | PowerDI3333-8 (SWP) Type UX |
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Product Attributes
| Packaging | Reel |
| Standard Pack Qty | 2000 |
3,572
Units In Stock
📦 Reel
- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
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Key Specifications
| Category | Bipolar Transistors - BJT |
| RoHS | RoHS Compliant |
| Lifecycle | New Product |
| Lead Time | 280 Days (from factory) |
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Documentation
Datasheet not available
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Compliance & Export
| Country / Standard | Code |
|---|---|
| USHTS | 8541290095 |
| TARIC | 8541210000 |
| ECCN | EAR99 |
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Product Overview
DXTN80030DFGQ-7 is a transistors manufactured by Diodes Incorporated. Notable characteristics of this part include a transistor type of NPN, a current, collector (ic) of 10 A, a voltage, collector emitter breakdown of 30 V, a vce saturation (max) @ ib, ic of 160mV @ 500mA, 10A, a current, collector cutoff of 300nA and a DC current gain (hfe) (min) @ ic, vce of 300 @ 100mA, 2V. This part has a typical lead time of 280 Days from factory. You can source DXTN80030DFGQ-7 through Simplytronix, with fast shipping and verified authenticity.
