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BFS17NTA Diodes Incorporated
*For representation only.

BFS17NTA

RF Bipolar Transistors SINGLE NPN 3.2GHz 50mA 330mw
Technical Specifications
Transistor Type NPN
Voltage - Collector Emitter Breakdown (Max) 11V
Frequency - Transition 3.2GHz
Noise Figure (dB Typ @ f) -
Gain -
Power - Max 330mW
DC Current Gain (hFE) (Min) @ Ic, Vce 56 @ 5mA, 10V
Current - Collector (Ic) (Max) 50mA
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Supplier Device Package SOT-23-3
📦 Product Attributes
Packaging Reel
Standard Pack Qty 3000
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
2,665
Units In Stock
📦 Reel
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🔑 Key Specifications
Category RF Bipolar Transistors
RoHS RoHS Compliant
Lifecycle
Lead Time 280 Days (from factory)
📄 Documentation
Datasheet not available
🌐 Compliance & Export
Country / Standard Code
CNHTS 8541210000
CAHTS 8541210000
USHTS 8541210095
JPHTS 854121000
TARIC 8541210000
MXHTS 8541210100
ECCN EAR99
Product Overview

Manufactured by Diodes Incorporated, the BFS17NTA is classified as a transistors. Notable characteristics of this part include a transistor type of NPN, a voltage, collector emitter breakdown of 11V, a frequency, transition of 3.2GHz, a noise figure of -, a gain of - and a power, max of 330mW. This part has a typical lead time of 280 Days from factory. You can source BFS17NTA through Simplytronix, with fast shipping and verified authenticity.

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