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CMSBN6601-HF Comchip Technology
*For representation only.

CMSBN6601-HF

MOSFETs MOSFET DUAL N-CH 20VDS 12VGS 13A CSPB2718-6
Technical Specifications
Technology MOSFET (Metal Oxide)
Configuration 2 N-Channel (Dual)
FET Feature -
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 13A (Ta)
Rds On (Max) @ Id, Vgs 11.5mOhm @ 3A, 4.5V
Vgs(th) (Max) @ Id 1.3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 25.4nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds -
Power - Max 2W (Ta)
Operating Temperature 150°C
Mounting Type Surface Mount
Package / Case 6-SMD, No Lead
Supplier Device Package CSPB2718-6
📦 Product Attributes
Packaging Reel
Standard Pack Qty 3000
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
5,471
Units In Stock
📦 Reel
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🔑 Key Specifications
Category MOSFETs
RoHS RoHS Compliant
Lifecycle
Lead Time 112 Days (from factory)
📄 Documentation
⬇ Download Datasheet
🌐 Compliance & Export
Country / Standard Code
CNHTS 8541290000
USHTS 8541290065
TARIC 8541290000
ECCN EAR99
Product Overview

Comchip Technology's CMSBN6601-HF is a widely used mosfets in electronic designs. Notable characteristics of this part include a technology of MOSFET (Metal Oxide), a configuration of 2 N-Channel (Dual), a FET feature of -, a drain to source voltage of 20V, a current, continuous drain (id) @ 25°C of 13A (Ta) and a rds on (max) @ id, vgs of 11.5mOhm @ 3A, 4.5V. This part has a typical lead time of 112 Days from factory and ships with a full manufacturer datasheet available for download. Simplytronix stocks CMSBN6601-HF for same-day shipping with genuine parts guaranteed.

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