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BC858AW-G Comchip Technology
*For representation only.

BC858AW-G

Bipolar Transistors - BJT -30, -.1
Technical Specifications
Transistor Type PNP
Current - Collector (Ic) (Max) 100 mA
Voltage - Collector Emitter Breakdown (Max) 30 V
Vce Saturation (Max) @ Ib, Ic 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max) 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 125 @ 2.2mA, 5V
Power - Max 150 mW
Frequency - Transition 100MHz
Operating Temperature -65°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case SC-70, SOT-323
Supplier Device Package SOT-323
📦 Product Attributes
Packaging Reel
Standard Pack Qty 3000
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
13,395
Units In Stock
📦 Reel
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🔑 Key Specifications
Category Bipolar Transistors - BJT
RoHS RoHS Compliant
Lifecycle
Lead Time 112 Days (from factory)
📄 Documentation
Datasheet not available
🌐 Compliance & Export
Country / Standard Code
CAHTS 8541100090
USHTS 8541210095
JPHTS 8541100901
KRHTS 8541409029
TARIC 8541100000
ECCN EAR99
Product Overview

BC858AW-G is a bipolar transistors - bjt manufactured by Comchip Technology. This component is defined by a transistor type of PNP, a current, collector (ic) of 100 mA, a voltage, collector emitter breakdown of 30 V, a vce saturation (max) @ ib, ic of 650mV @ 5mA, 100mA, a current, collector cutoff of 15nA (ICBO) and a DC current gain (hfe) (min) @ ic, vce of 125 @ 2.2mA, 5V. This part has a typical lead time of 112 Days from factory. Order BC858AW-G from Simplytronix for authenticated stock and same-day order processing.

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