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CDF56G6511N TR13 PBFREE Central Semiconductor
*For representation only.

CDF56G6511N TR13 PBFREE

GaN FETs 650V, 11A, N-Channel GaN FET
Technical Specifications
FET Type N-Channel
Technology GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 11.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V
Rds On (Max) @ Id, Vgs 190mOhm @ 3.9A, 6V
Vgs(th) (Max) @ Id 2.5V @ 12.2mA
Gate Charge (Qg) (Max) @ Vgs 2.8 nC @ 6 V
Vgs (Max) +7V, -1.4V
Input Capacitance (Ciss) (Max) @ Vds 96 pF @ 400 V
FET Feature -
Power Dissipation (Max) 1.1W (Ta), 84W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Grade -
Qualification -
Mounting Type Surface Mount, Wettable Flank
Supplier Device Package 8-DFN (5x6)
Package / Case 8-PowerVDFN
📦 Product Attributes
Packaging Reel
Standard Pack Qty 2500
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
4,589
Units In Stock
📦 Reel
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🔑 Key Specifications
Category GaN FETs
RoHS RoHS Compliant
Lifecycle
Lead Time 0 Days (from factory)
📄 Documentation
⬇ Download Datasheet
🌐 Compliance & Export
Country / Standard Code
CAHTS 8541290000
USHTS 8541290065
JPHTS 854129000
TARIC 8541290000
MXHTS 8541299900
ECCN EAR99
Product Overview

Manufactured by Central Semiconductor, the CDF56G6511N TR13 PBFREE is classified as a gan fets. This component is defined by a FET type of N-Channel, a technology of GaNFET (Gallium Nitride), a drain to source voltage of 650 V, a current, continuous drain (id) @ 25°C of 11.5A (Tc), a drive voltage of 6V and a rds on (max) @ id, vgs of 190mOhm @ 3.9A, 6V. This part has a typical lead time of 0 Days from factory and ships with a full manufacturer datasheet available for download. Simplytronix stocks CDF56G6511N TR13 PBFREE for same-day shipping with genuine parts guaranteed.

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