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2N718A TIN/LEAD

Bipolar Transistors - BJT NPN 75Vcbo 32Vceo 7.0Vebo 25pF
Technical Specifications
Transistor Type NPN
Voltage - Collector Emitter Breakdown (Max) 32 V
Vce Saturation (Max) @ Ib, Ic -
Current - Collector Cutoff (Max) 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 150mA, 10V
Frequency - Transition 60MHz
Operating Temperature -
Grade -
Qualification -
Mounting Type Through Hole
Package / Case TO-206AA, TO-18-3 Metal Can
Supplier Device Package TO-18
📦 Product Attributes
Packaging Bulk
Standard Pack Qty 2000
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
10,768
Units In Stock
📦 Bulk
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🔑 Key Specifications
Category Bipolar Transistors - BJT
RoHS RoHS Compliant
Lifecycle
Lead Time 0 Days (from factory)
📄 Documentation
⬇ Download Datasheet
🌐 Compliance & Export
Country / Standard Code
USHTS 8541210095
TARIC 8541210000
ECCN EAR99
Product Overview

The 2N718A TIN/LEAD from Central Semiconductor falls under the bipolar transistors - bjt category. Notable characteristics of this part include a transistor type of NPN, a voltage, collector emitter breakdown of 32 V, a vce saturation (max) @ ib, ic of -, a current, collector cutoff of 10µA, a DC current gain (hfe) (min) @ ic, vce of 40 @ 150mA, 10V and a frequency, transition of 60MHz. This part has a typical lead time of 0 Days from factory and ships with a full manufacturer datasheet available for download. Simplytronix carries 2N718A TIN/LEAD in stock, backed by a genuine parts guarantee and quick dispatch.

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