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2N6431 PBFREE Central Semiconductor
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2N6431 PBFREE

Bipolar Transistors - BJT NPN High Voltage
Technical Specifications
Transistor Type NPN
Current - Collector (Ic) (Max) 100 mA
Voltage - Collector Emitter Breakdown (Max) 300 V
Vce Saturation (Max) @ Ib, Ic 500mV @ 2mA, 20mA
Current - Collector Cutoff (Max) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 50 @ 30mA, 10V
Power - Max 1.8 W
Frequency - Transition 50MHz
Operating Temperature -65°C ~ 200°C (TJ)
Mounting Type Through Hole
Package / Case TO-206AA, TO-18-3 Metal Can
Supplier Device Package TO-18
📦 Product Attributes
Packaging Bulk
Standard Pack Qty 2000
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
4,438
Units In Stock
📦 Bulk
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🔑 Key Specifications
Category Bipolar Transistors - BJT
RoHS RoHS Compliant
Lifecycle
Lead Time 14 Days (from factory)
📄 Documentation
Datasheet not available
🌐 Compliance & Export
Country / Standard Code
CNHTS 8541290000
USHTS 8541210095
TARIC 8541210000
MXHTS 85412101
ECCN EAR99
Product Overview

Central Semiconductor's 2N6431 PBFREE is a widely used bipolar transistors - bjt in electronic designs. It features a transistor type of NPN, a current, collector (ic) of 100 mA, a voltage, collector emitter breakdown of 300 V, a vce saturation (max) @ ib, ic of 500mV @ 2mA, 20mA, a current, collector cutoff of 100nA (ICBO) and a DC current gain (hfe) (min) @ ic, vce of 50 @ 30mA, 10V. This part has a typical lead time of 14 Days from factory. Order 2N6431 PBFREE from Simplytronix for authenticated stock and same-day order processing.

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