*For representation only.
2N6301 TIN/LEAD
Central Semiconductor
Active
Bipolar Transistors - BJT 80Vcbo 80Vceo 5.0Vebo 8.0A 75W
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Technical Specifications
| Transistor Type | NPN - Darlington |
| Current - Collector (Ic) (Max) | 8 A |
| Voltage - Collector Emitter Breakdown (Max) | 80 V |
| Vce Saturation (Max) @ Ib, Ic | 2V @ 16mA, 4A |
| Current - Collector Cutoff (Max) | 500µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 750 @ 4A, 3V |
| Power - Max | 75 W |
| Frequency - Transition | 4MHz |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | TO-213AA, TO-66-2 |
| Supplier Device Package | TO-66 |
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Product Attributes
| Packaging | Tube |
| Standard Pack Qty | 30 |
12,414
Units In Stock
📦 Tube
- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
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Key Specifications
| Category | Bipolar Transistors - BJT |
| RoHS | RoHS Compliant |
| Lifecycle | |
| Lead Time | 0 Days (from factory) |
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Documentation
⬇ Download Datasheet
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Compliance & Export
| Country / Standard | Code |
|---|---|
| USHTS | 8541290065 |
| TARIC | 8541210000 |
| ECCN | EAR99 |
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Product Overview
Manufactured by Central Semiconductor, the 2N6301 TIN/LEAD is classified as a bipolar transistors - bjt. Notable characteristics of this part include a transistor type of NPN - Darlington, a current, collector (ic) of 8 A, a voltage, collector emitter breakdown of 80 V, a vce saturation (max) @ ib, ic of 2V @ 16mA, 4A, a current, collector cutoff of 500µA and a DC current gain (hfe) (min) @ ic, vce of 750 @ 4A, 3V. This part has a typical lead time of 0 Days from factory and ships with a full manufacturer datasheet available for download. You can source 2N6301 TIN/LEAD through Simplytronix, with fast shipping and verified authenticity.
