*For representation only.
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Technical Specifications
| Voltage | 40V |
| Power Dissipation (Max) | 300 mW |
| Voltage - Output | 6V |
| Voltage - Offset (Vt) | 1.6 V |
| Current - Gate to Anode Leakage (Igao) | 10 nA |
| Current - Valley (Iv) | 50 µA |
| Current - Peak | 2 µA |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) Formed Leads |
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Product Attributes
| Packaging | Reel |
| Standard Pack Qty | 2000 |
9,305
Units In Stock
📦 Reel
- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
🔑
Key Specifications
| Category | Bipolar Transistors - BJT |
| RoHS | RoHS Compliant |
| Lifecycle | |
| Lead Time | 14 Days (from factory) |
📄
Documentation
⬇ Download Datasheet
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Compliance & Export
| Country / Standard | Code |
|---|---|
| USHTS | 8541210095 |
| TARIC | 8541210000 |
| ECCN | EAR99 |
ℹ
Product Overview
The 2N6027 TRE PBFREE from Central Semiconductor falls under the bipolar transistors - bjt category. Key specifications include a voltage of 40V, a power dissipation of 300 mW, a voltage, output of 6V, a voltage, offset of 1.6 V, a current, gate to anode leakage of 10 nA and a current, valley of 50 µA. This part has a typical lead time of 14 Days from factory and ships with a full manufacturer datasheet available for download. You can source 2N6027 TRE PBFREE through Simplytronix, with fast shipping and verified authenticity.
