*For representation only.
2N5822 PBFREE
Central Semiconductor
Active
Bipolar Transistors - BJT 70Vcbo 70Vces 60Vceo 5.0V 750mA 625wW
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Technical Specifications
| Transistor Type | NPN |
| Current - Collector (Ic) (Max) | 750 mA |
| Voltage - Collector Emitter Breakdown (Max) | 70 V |
| Vce Saturation (Max) @ Ib, Ic | 1.2V @ 50mA, 500mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 2mA, 2V |
| Power - Max | 1.5 W |
| Frequency - Transition | 120MHz |
| Operating Temperature | -65°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) |
| Supplier Device Package | TO-92 |
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Product Attributes
| Packaging | Bulk |
| Standard Pack Qty | 2000 |
8,485
Units In Stock
📦 Bulk
- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
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Key Specifications
| Category | Bipolar Transistors - BJT |
| RoHS | RoHS Compliant |
| Lifecycle | |
| Lead Time | 14 Days (from factory) |
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Documentation
⬇ Download Datasheet
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Compliance & Export
| Country / Standard | Code |
|---|---|
| CNHTS | 8541290000 |
| USHTS | 8541210075 |
| TARIC | 8541290000 |
| MXHTS | 85412999 |
| ECCN | EAR99 |
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Product Overview
2N5822 PBFREE is a bipolar transistors - bjt manufactured by Central Semiconductor. Key specifications include a transistor type of NPN, a current, collector (ic) of 750 mA, a voltage, collector emitter breakdown of 70 V, a vce saturation (max) @ ib, ic of 1.2V @ 50mA, 500mA, a current, collector cutoff of 100nA (ICBO) and a DC current gain (hfe) (min) @ ic, vce of 100 @ 2mA, 2V. This part has a typical lead time of 14 Days from factory and ships with a full manufacturer datasheet available for download. Order 2N5822 PBFREE from Simplytronix for authenticated stock and same-day order processing.
