*For representation only.
2N5415 TIN/LEAD
Central Semiconductor
Active
Bipolar Transistors - BJT PNP 200Vcbo 200Vceo 4.0Vebo 1.0A 1W
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Technical Specifications
| Transistor Type | PNP |
| Current - Collector (Ic) (Max) | 1 A |
| Voltage - Collector Emitter Breakdown (Max) | 200 V |
| Vce Saturation (Max) @ Ib, Ic | 2.5V @ 5mA, 50mA |
| Current - Collector Cutoff (Max) | 50µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 50mA, 10V |
| Power - Max | 1 W |
| Frequency - Transition | 15MHz |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Grade | - |
| Qualification | - |
| Mounting Type | Through Hole |
| Package / Case | TO-205AD, TO-39-3 Metal Can |
| Supplier Device Package | TO-39 |
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Product Attributes
| Packaging | Bulk |
| Standard Pack Qty | 500 |
11,719
Units In Stock
📦 Bulk
- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
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Key Specifications
| Category | Bipolar Transistors - BJT |
| RoHS | RoHS Compliant |
| Lifecycle | |
| Lead Time | 294 Days (from factory) |
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Documentation
⬇ Download Datasheet
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Compliance & Export
| Country / Standard | Code |
|---|---|
| USHTS | 8541290065 |
| TARIC | 8541210000 |
| ECCN | EAR99 |
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Product Overview
The 2N5415 TIN/LEAD from Central Semiconductor falls under the bipolar transistors - bjt category. Key specifications include a transistor type of PNP, a current, collector (ic) of 1 A, a voltage, collector emitter breakdown of 200 V, a vce saturation (max) @ ib, ic of 2.5V @ 5mA, 50mA, a current, collector cutoff of 50µA and a DC current gain (hfe) (min) @ ic, vce of 30 @ 50mA, 10V. This part has a typical lead time of 294 Days from factory and ships with a full manufacturer datasheet available for download. Simplytronix carries 2N5415 TIN/LEAD in stock, backed by a genuine parts guarantee and quick dispatch.
