*For representation only.
2N5320 TIN/LEAD
Central Semiconductor
Active
Bipolar Transistors - BJT NPN 100Vcbo 100Vcev 75Vceo 6.0Vebo 10W
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Technical Specifications
| Transistor Type | NPN |
| Current - Collector (Ic) (Max) | 2 A |
| Voltage - Collector Emitter Breakdown (Max) | 75 V |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 50mA, 500mA |
| Current - Collector Cutoff (Max) | 500µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 500mA, 4V |
| Power - Max | 10 W |
| Frequency - Transition | 50MHz |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Grade | - |
| Qualification | - |
| Mounting Type | Through Hole |
| Package / Case | TO-205AD, TO-39-3 Metal Can |
| Supplier Device Package | TO-39 |
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Product Attributes
| Packaging | Bulk |
| Standard Pack Qty | 500 |
11,397
Units In Stock
📦 Bulk
- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
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Key Specifications
| Category | Bipolar Transistors - BJT |
| RoHS | RoHS Compliant |
| Lifecycle | |
| Lead Time | 0 Days (from factory) |
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Documentation
⬇ Download Datasheet
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Compliance & Export
| Country / Standard | Code |
|---|---|
| USHTS | 8541290055 |
| TARIC | 8541210000 |
| ECCN | EAR99 |
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Product Overview
2N5320 TIN/LEAD is a bipolar transistors - bjt manufactured by Central Semiconductor. It features a transistor type of NPN, a current, collector (ic) of 2 A, a voltage, collector emitter breakdown of 75 V, a vce saturation (max) @ ib, ic of 500mV @ 50mA, 500mA, a current, collector cutoff of 500µA (ICBO) and a DC current gain (hfe) (min) @ ic, vce of 30 @ 500mA, 4V. This part has a typical lead time of 0 Days from factory and ships with a full manufacturer datasheet available for download. You can source 2N5320 TIN/LEAD through Simplytronix, with fast shipping and verified authenticity.
