*For representation only.
2N5308 APP TIN/LEAD
Central Semiconductor
Active
Darlington Transistors NPN 40Vcbo 40Vceo 12Vebo 300mA 625mW
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Technical Specifications
| Transistor Type | NPN - Darlington |
| Current - Collector (Ic) (Max) | 300 mA |
| Voltage - Collector Emitter Breakdown (Max) | 40 V |
| Vce Saturation (Max) @ Ib, Ic | 1.4V @ 200µA, 200mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 7000 @ 2mA, 5V |
| Frequency - Transition | 60MHz |
| Operating Temperature | -65°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) Formed Leads |
| Supplier Device Package | TO-92 |
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Product Attributes
| Packaging | Ammo Pack |
| Standard Pack Qty | 2000 |
4,144
Units In Stock
📦 Ammo Pack
- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
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Key Specifications
| Category | Darlington Transistors |
| RoHS | RoHS Compliant |
| Lifecycle | |
| Lead Time | 0 Days (from factory) |
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Documentation
⬇ Download Datasheet
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Compliance & Export
| Country / Standard | Code |
|---|---|
| USHTS | 8541210095 |
| ECCN | EAR99 |
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Product Overview
Manufactured by Central Semiconductor, the 2N5308 APP TIN/LEAD is classified as a darlington transistors. This component is defined by a transistor type of NPN - Darlington, a current, collector (ic) of 300 mA, a voltage, collector emitter breakdown of 40 V, a vce saturation (max) @ ib, ic of 1.4V @ 200µA, 200mA, a current, collector cutoff of 100nA (ICBO) and a DC current gain (hfe) (min) @ ic, vce of 7000 @ 2mA, 5V. This part has a typical lead time of 0 Days from factory and ships with a full manufacturer datasheet available for download. Simplytronix carries 2N5308 APP TIN/LEAD in stock, backed by a genuine parts guarantee and quick dispatch.
