*For representation only.
2N5306 TIN/LEAD
Central Semiconductor
Active
Bipolar Transistors - BJT NPN 25Vcbo 25Vceo 12Vebo 300mA 625mW
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Technical Specifications
| Transistor Type | NPN - Darlington |
| Current - Collector (Ic) (Max) | 300 mA |
| Voltage - Collector Emitter Breakdown (Max) | 25 V |
| Vce Saturation (Max) @ Ib, Ic | 1.4V @ 200µA, 200mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 7000 @ 2mA, 5V |
| Power - Max | 625 mW |
| Frequency - Transition | 60MHz |
| Operating Temperature | -65°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) |
| Supplier Device Package | TO-92-3 |
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Product Attributes
| Packaging | Bulk |
| Standard Pack Qty | 2500 |
10,370
Units In Stock
📦 Bulk
- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
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Key Specifications
| Category | Bipolar Transistors - BJT |
| RoHS | RoHS Compliant |
| Lifecycle | |
| Lead Time | 294 Days (from factory) |
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Documentation
Datasheet not available
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Compliance & Export
| Country / Standard | Code |
|---|---|
| USHTS | 8541210095 |
| TARIC | 8541210000 |
| ECCN | EAR99 |
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Product Overview
The 2N5306 TIN/LEAD from Central Semiconductor falls under the bipolar transistors - bjt category. It features a transistor type of NPN - Darlington, a current, collector (ic) of 300 mA, a voltage, collector emitter breakdown of 25 V, a vce saturation (max) @ ib, ic of 1.4V @ 200µA, 200mA, a current, collector cutoff of 100nA (ICBO) and a DC current gain (hfe) (min) @ ic, vce of 7000 @ 2mA, 5V. This part has a typical lead time of 294 Days from factory. Order 2N5306 TIN/LEAD from Simplytronix for authenticated stock and same-day order processing.
