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2N5226 TIN/LEAD Central Semiconductor
*For representation only.

2N5226 TIN/LEAD

Bipolar Transistors - BJT PNP 25Vcbo 25Vceo 4.0Vebo 8pF
Technical Specifications
Transistor Type PNP
Current - Collector (Ic) (Max) 500 mA
Voltage - Collector Emitter Breakdown (Max) 25 V
Vce Saturation (Max) @ Ib, Ic -
Current - Collector Cutoff (Max) 300nA
DC Current Gain (hFE) (Min) @ Ic, Vce 30 @ 50mA, 10V
Frequency - Transition 50MHz
Operating Temperature -
Grade -
Qualification -
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package TO-92-3
📦 Product Attributes
Packaging Bulk
Standard Pack Qty 2500
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
13,463
Units In Stock
📦 Bulk
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🔑 Key Specifications
Category Bipolar Transistors - BJT
RoHS RoHS Compliant
Lifecycle
Lead Time 294 Days (from factory)
📄 Documentation
⬇ Download Datasheet
🌐 Compliance & Export
Country / Standard Code
USHTS 8541210095
TARIC 8541210000
ECCN EAR99
Product Overview

2N5226 TIN/LEAD is a bipolar transistors - bjt manufactured by Central Semiconductor. Key specifications include a transistor type of PNP, a current, collector (ic) of 500 mA, a voltage, collector emitter breakdown of 25 V, a vce saturation (max) @ ib, ic of -, a current, collector cutoff of 300nA and a DC current gain (hfe) (min) @ ic, vce of 30 @ 50mA, 10V. This part has a typical lead time of 294 Days from factory and ships with a full manufacturer datasheet available for download. You can source 2N5226 TIN/LEAD through Simplytronix, with fast shipping and verified authenticity.

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