*For representation only.
2N4403 TIN/LEAD
Central Semiconductor
Active
Bipolar Transistors - BJT PNP 40Vcbo 40Vceo 5.0Vebo 600mA 625mW
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Technical Specifications
| Transistor Type | PNP |
| Current - Collector (Ic) (Max) | 600 mA |
| Voltage - Collector Emitter Breakdown (Max) | 40 V |
| Vce Saturation (Max) @ Ib, Ic | 750mV @ 50mA, 500mA |
| Current - Collector Cutoff (Max) | 100nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 150mA, 2V |
| Power - Max | 625 mW |
| Frequency - Transition | 200MHz |
| Operating Temperature | -65°C ~ 150°C (TJ) |
| Grade | - |
| Qualification | - |
| Mounting Type | Through Hole |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) |
| Supplier Device Package | TO-92-3 |
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Product Attributes
| Packaging | Bulk |
| Standard Pack Qty | 2500 |
7,791
Units In Stock
📦 Bulk
- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
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Key Specifications
| Category | Bipolar Transistors - BJT |
| RoHS | RoHS Compliant |
| Lifecycle | |
| Lead Time | 0 Days (from factory) |
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Documentation
⬇ Download Datasheet
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Compliance & Export
| Country / Standard | Code |
|---|---|
| USHTS | 8541210075 |
| TARIC | 8541210000 |
| ECCN | EAR99 |
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Product Overview
2N4403 TIN/LEAD is a bipolar transistors - bjt manufactured by Central Semiconductor. Key specifications include a transistor type of PNP, a current, collector (ic) of 600 mA, a voltage, collector emitter breakdown of 40 V, a vce saturation (max) @ ib, ic of 750mV @ 50mA, 500mA, a current, collector cutoff of 100nA and a DC current gain (hfe) (min) @ ic, vce of 100 @ 150mA, 2V. This part has a typical lead time of 0 Days from factory and ships with a full manufacturer datasheet available for download. Simplytronix carries 2N4403 TIN/LEAD in stock, backed by a genuine parts guarantee and quick dispatch.
