*For representation only.
2N4029 TIN/LEAD
Central Semiconductor
Active
Bipolar Transistors - BJT PNP 80Vcbo 80Vceo 5.0Vebo 20pF
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Technical Specifications
| Transistor Type | PNP |
| Voltage - Collector Emitter Breakdown (Max) | 80 V |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 500µA, 10mA |
| Current - Collector Cutoff (Max) | 50nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 100mA, 5V |
| Frequency - Transition | 150MHz |
| Operating Temperature | - |
| Grade | - |
| Qualification | - |
| Mounting Type | Through Hole |
| Package / Case | TO-206AA, TO-18-3 Metal Can |
| Supplier Device Package | TO-18 |
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Product Attributes
| Packaging | Bulk |
| Standard Pack Qty | 2000 |
7,107
Units In Stock
📦 Bulk
- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
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Key Specifications
| Category | Bipolar Transistors - BJT |
| RoHS | RoHS Compliant |
| Lifecycle | |
| Lead Time | 294 Days (from factory) |
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Documentation
⬇ Download Datasheet
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Compliance & Export
| Country / Standard | Code |
|---|---|
| USHTS | 8541210075 |
| TARIC | 8541210000 |
| ECCN | EAR99 |
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Product Overview
Central Semiconductor's 2N4029 TIN/LEAD is a widely used bipolar transistors - bjt in electronic designs. This component is defined by a transistor type of PNP, a voltage, collector emitter breakdown of 80 V, a vce saturation (max) @ ib, ic of 500mV @ 500µA, 10mA, a current, collector cutoff of 50nA, a DC current gain (hfe) (min) @ ic, vce of 100 @ 100mA, 5V and a frequency, transition of 150MHz. This part has a typical lead time of 294 Days from factory and ships with a full manufacturer datasheet available for download. Order 2N4029 TIN/LEAD from Simplytronix for authenticated stock and same-day order processing.
