*For representation only.
2N3398 TIN/LEAD
Central Semiconductor
Active
Bipolar Transistors - BJT NPN 25Vcbo 25Vceo 5.0Vebo 100mA 360mW
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Technical Specifications
| Transistor Type | NPN |
| Voltage - Collector Emitter Breakdown (Max) | 25 V |
| Vce Saturation (Max) @ Ib, Ic | - |
| Current - Collector Cutoff (Max) | 100nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 55 @ 2mA, 4.5V |
| Frequency - Transition | - |
| Operating Temperature | - |
| Grade | - |
| Qualification | - |
| Mounting Type | Through Hole |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) |
| Supplier Device Package | TO-92-3 |
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Product Attributes
| Packaging | Bulk |
| Standard Pack Qty | 2500 |
3,306
Units In Stock
📦 Bulk
- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
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Key Specifications
| Category | Bipolar Transistors - BJT |
| RoHS | RoHS Compliant |
| Lifecycle | |
| Lead Time | 329 Days (from factory) |
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Documentation
⬇ Download Datasheet
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Compliance & Export
| Country / Standard | Code |
|---|---|
| USHTS | 8541210095 |
| TARIC | 8541210000 |
| ECCN | EAR99 |
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Product Overview
Manufactured by Central Semiconductor, the 2N3398 TIN/LEAD is classified as a bipolar transistors - bjt. Key specifications include a transistor type of NPN, a voltage, collector emitter breakdown of 25 V, a vce saturation (max) @ ib, ic of -, a current, collector cutoff of 100nA, a DC current gain (hfe) (min) @ ic, vce of 55 @ 2mA, 4.5V and a frequency, transition of -. This part has a typical lead time of 329 Days from factory and ships with a full manufacturer datasheet available for download. Simplytronix stocks 2N3398 TIN/LEAD for same-day shipping with genuine parts guaranteed.
