*For representation only.
2N3300 TIN/LEAD
Central Semiconductor
Active
Bipolar Transistors - BJT NPN 60Vcbo 30Vceo 5.0Vebo 8pF
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Technical Specifications
| Transistor Type | NPN |
| Current - Collector (Ic) (Max) | 500 mA |
| Voltage - Collector Emitter Breakdown (Max) | 30 V |
| Vce Saturation (Max) @ Ib, Ic | 450mV @ 30mA, 300mA |
| Current - Collector Cutoff (Max) | 10nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 150mA, 10V |
| Power - Max | 800 mW |
| Frequency - Transition | 250MHz |
| Operating Temperature | - |
| Grade | - |
| Qualification | - |
| Mounting Type | Through Hole |
| Package / Case | TO-205AD, TO-39-3 Metal Can |
| Supplier Device Package | TO-39 |
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Product Attributes
| Packaging | Bulk |
| Standard Pack Qty | 500 |
14,035
Units In Stock
📦 Bulk
- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
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Key Specifications
| Category | Bipolar Transistors - BJT |
| RoHS | RoHS Compliant |
| Lifecycle | |
| Lead Time | 0 Days (from factory) |
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Documentation
⬇ Download Datasheet
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Compliance & Export
| Country / Standard | Code |
|---|---|
| USHTS | 8541210075 |
| TARIC | 8541210000 |
| ECCN | EAR99 |
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Product Overview
2N3300 TIN/LEAD is a bipolar transistors - bjt manufactured by Central Semiconductor. This component is defined by a transistor type of NPN, a current, collector (ic) of 500 mA, a voltage, collector emitter breakdown of 30 V, a vce saturation (max) @ ib, ic of 450mV @ 30mA, 300mA, a current, collector cutoff of 10nA and a DC current gain (hfe) (min) @ ic, vce of 100 @ 150mA, 10V. This part has a typical lead time of 0 Days from factory and ships with a full manufacturer datasheet available for download. You can source 2N3300 TIN/LEAD through Simplytronix, with fast shipping and verified authenticity.
