*For representation only.
2N3108 TIN/LEAD
Central Semiconductor
Active
Bipolar Transistors - BJT NPN 100Vcbo 60Vceo 7.0Vebo 20pF
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Technical Specifications
| Transistor Type | NPN |
| Voltage - Collector Emitter Breakdown (Max) | 60 V |
| Vce Saturation (Max) @ Ib, Ic | - |
| Current - Collector Cutoff (Max) | 10nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 150mA, 10V |
| Frequency - Transition | 60MHz |
| Operating Temperature | - |
| Grade | - |
| Qualification | - |
| Mounting Type | Through Hole |
| Package / Case | TO-205AD, TO-39-3 Metal Can |
| Supplier Device Package | TO-39 |
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Product Attributes
| Packaging | Bulk |
| Standard Pack Qty | 500 |
13,401
Units In Stock
📦 Bulk
- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
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Key Specifications
| Category | Bipolar Transistors - BJT |
| RoHS | RoHS Compliant |
| Lifecycle | |
| Lead Time | 294 Days (from factory) |
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Documentation
⬇ Download Datasheet
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Compliance & Export
| Country / Standard | Code |
|---|---|
| USHTS | 8541210095 |
| TARIC | 8541210000 |
| ECCN | EAR99 |
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Product Overview
Central Semiconductor's 2N3108 TIN/LEAD is a widely used bipolar transistors - bjt in electronic designs. Notable characteristics of this part include a transistor type of NPN, a voltage, collector emitter breakdown of 60 V, a vce saturation (max) @ ib, ic of -, a current, collector cutoff of 10nA, a DC current gain (hfe) (min) @ ic, vce of 40 @ 150mA, 10V and a frequency, transition of 60MHz. This part has a typical lead time of 294 Days from factory and ships with a full manufacturer datasheet available for download. Simplytronix stocks 2N3108 TIN/LEAD for same-day shipping with genuine parts guaranteed.
