*For representation only.
2N2857 TIN/LEAD
Central Semiconductor
Active
Bipolar Transistors - BJT 30Vcbo 15Vceo 2.5V 40mA 200mW
⚙
Technical Specifications
| Transistor Type | NPN |
| Voltage - Collector Emitter Breakdown (Max) | 15V |
| Frequency - Transition | 1.9GHz |
| Noise Figure (dB Typ @ f) | 4.5dB @ 450MHz |
| Gain | 12.5dB ~ 19dB |
| Power - Max | 200mW |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 3mA, 1V |
| Current - Collector (Ic) (Max) | 40mA |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Grade | - |
| Qualification | - |
| Mounting Type | Through Hole |
| Package / Case | TO-206AF, TO-72-4 Metal Can |
| Supplier Device Package | TO-72 |
📦
Product Attributes
| Packaging | Bulk |
| Standard Pack Qty | 2000 |
14,346
Units In Stock
📦 Bulk
- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
🔑
Key Specifications
| Category | Bipolar Transistors - BJT |
| RoHS | RoHS Compliant |
| Lifecycle | |
| Lead Time | 0 Days (from factory) |
📄
Documentation
⬇ Download Datasheet
🌐
Compliance & Export
| Country / Standard | Code |
|---|---|
| USHTS | 8541210075 |
| TARIC | 8541210000 |
| ECCN | EAR99 |
ℹ
Product Overview
2N2857 TIN/LEAD is a bipolar transistors - bjt manufactured by Central Semiconductor. Key specifications include a transistor type of NPN, a voltage, collector emitter breakdown of 15V, a frequency, transition of 1.9GHz, a noise figure of 4.5dB @ 450MHz, a gain of 12.5dB ~ 19dB and a power, max of 200mW. This part has a typical lead time of 0 Days from factory and ships with a full manufacturer datasheet available for download. Order 2N2857 TIN/LEAD from Simplytronix for authenticated stock and same-day order processing.
