*For representation only.
2N2712 TIN/LEAD
Central Semiconductor
Active
Bipolar Transistors - BJT NPN 18Vcbo 18Vceo 5.0Vebo 18Vcb 2.8dB
⚙
Technical Specifications
| Transistor Type | NPN |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 18 V |
| Vce Saturation (Max) @ Ib, Ic | - |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | - |
| Frequency - Transition | - |
| Operating Temperature | - |
| Grade | - |
| Qualification | - |
| Mounting Type | Through Hole |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) |
| Supplier Device Package | TO-92-3 |
📦
Product Attributes
| Packaging | Bulk |
| Standard Pack Qty | 2500 |
13,536
Units In Stock
📦 Bulk
- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
🔑
Key Specifications
| Category | Bipolar Transistors - BJT |
| RoHS | RoHS Compliant |
| Lifecycle | |
| Lead Time | 294 Days (from factory) |
📄
Documentation
⬇ Download Datasheet
🌐
Compliance & Export
| Country / Standard | Code |
|---|---|
| USHTS | 8541210095 |
| TARIC | 8541210000 |
| ECCN | EAR99 |
ℹ
Product Overview
Central Semiconductor's 2N2712 TIN/LEAD is a widely used bipolar transistors - bjt in electronic designs. This component is defined by a transistor type of NPN, a current, collector (ic) of 100 mA, a voltage, collector emitter breakdown of 18 V, a vce saturation (max) @ ib, ic of -, a current, collector cutoff of 500nA and a DC current gain (hfe) (min) @ ic, vce of -. This part has a typical lead time of 294 Days from factory and ships with a full manufacturer datasheet available for download. You can source 2N2712 TIN/LEAD through Simplytronix, with fast shipping and verified authenticity.
