| FET Type | N-Channel |
| Technology | SiCFET (Silicon Carbide) |
| Drain to Source Voltage (Vdss) | 650 V |
| Current - Continuous Drain (Id) @ 25°C | 76A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 15V, 18V |
| Rds On (Max) @ Id, Vgs | 35mOhm @ 30A, 18V |
| Vgs(th) (Max) @ Id | 4.2V @ 8mA |
| Gate Charge (Qg) (Max) @ Vgs | 80 nC @ 18 V |
| Vgs (Max) | +22V, -8V |
| Input Capacitance (Ciss) (Max) @ Vds | 1946 pF @ 600 V |
| FET Feature | - |
| Power Dissipation (Max) | 298W (Ta) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Grade | - |
| Qualification | - |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-247-4L |
| Package / Case | TO-247-4 |
| Packaging | Tube |
| Standard Pack Qty | 30 |
| Category | SiC MOSFETs |
| RoHS | RoHS Compliant |
| Lifecycle | New Product |
| Lead Time | 248 Days (from factory) |
| Country / Standard | Code |
|---|---|
| CAHTS | 8541290000 |
| USHTS | 8541290065 |
| JPHTS | 854129000 |
| KRHTS | 8541299000 |
| TARIC | 8541290000 |
| MXHTS | 8541299900 |
| ECCN | EAR99 |
AMR027V065H2 is a sic mosfets manufactured by APC-E. It features a FET type of N-Channel, a technology of SiCFET (Silicon Carbide), a drain to source voltage of 650 V, a current, continuous drain (id) @ 25°C of 76A (Ta), a drive voltage of 15V, 18V and a rds on (max) @ id, vgs of 35mOhm @ 30A, 18V. This part has a typical lead time of 248 Days from factory. Simplytronix carries AMR027V065H2 in stock, backed by a genuine parts guarantee and quick dispatch.