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AMR027V065H2 APC-E
*For representation only.

AMR027V065H2

SiC MOSFETs 650V 27mR, TO-247-4L, Industrial Grade
Technical Specifications
FET Type N-Channel
Technology SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 76A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 15V, 18V
Rds On (Max) @ Id, Vgs 35mOhm @ 30A, 18V
Vgs(th) (Max) @ Id 4.2V @ 8mA
Gate Charge (Qg) (Max) @ Vgs 80 nC @ 18 V
Vgs (Max) +22V, -8V
Input Capacitance (Ciss) (Max) @ Vds 1946 pF @ 600 V
FET Feature -
Power Dissipation (Max) 298W (Ta)
Operating Temperature -55°C ~ 175°C (TJ)
Grade -
Qualification -
Mounting Type Through Hole
Supplier Device Package TO-247-4L
Package / Case TO-247-4
📦 Product Attributes
Packaging Tube
Standard Pack Qty 30
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
12,230
Units In Stock
📦 Tube
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🔑 Key Specifications
Category SiC MOSFETs
RoHS RoHS Compliant
Lifecycle New Product
Lead Time 248 Days (from factory)
📄 Documentation
Datasheet not available
🌐 Compliance & Export
Country / Standard Code
CAHTS 8541290000
USHTS 8541290065
JPHTS 854129000
KRHTS 8541299000
TARIC 8541290000
MXHTS 8541299900
ECCN EAR99
Product Overview

AMR027V065H2 is a sic mosfets manufactured by APC-E. It features a FET type of N-Channel, a technology of SiCFET (Silicon Carbide), a drain to source voltage of 650 V, a current, continuous drain (id) @ 25°C of 76A (Ta), a drive voltage of 15V, 18V and a rds on (max) @ id, vgs of 35mOhm @ 30A, 18V. This part has a typical lead time of 248 Days from factory. Simplytronix carries AMR027V065H2 in stock, backed by a genuine parts guarantee and quick dispatch.

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