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AS6C2008A-55SINTR

SRAM 2M, 3.3V, 55ns 256K x 8 Asynch SRAM
Technical Specifications
Programmable Not Verified
Memory Type Volatile
Memory Format SRAM
Technology SRAM - Asynchronous
Memory Size 2Mbit
Memory Organization 256K x 8
Memory Interface Parallel
Write Cycle Time - Word, Page 55ns
Access Time 55 ns
Voltage - Supply 2.7V ~ 5.5V
Operating Temperature -40°C ~ 85°C (TA)
Mounting Type Surface Mount
Package / Case 32-SOIC (0.445", 11.30mm Width)
Supplier Device Package 32-SOP
Product Attributes
Packaging Reel
Standard Pack Qty1000
Alternate / Replacement Parts
Alternate Packaging AS6C2008A-55SIN
Suggested Replacement AS6C2008A-55SIN
5,611
In Stock
Packaging: Reel
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Test Report Available Upon Request click here to view sample report
Key Specifications
CategorySRAM
RoHSRoHS Compliant
Lifecycle
Reported Lead Time 84 Days (from factory)
Documentation
Download Datasheet
Compliance & Export Information
Country Code
CNHTS 8542319090
CAHTS 8542320041
USHTS 8542320041
JPHTS 854232019
KRHTS 8542321020
TARIC 8542324500
MXHTS 8542320201
ECCN 3A991.b.2.a
Product Overview

AS6C2008A-55SINTR by Alliance Memory is a sram designed for reliable performance in electronic applications. It is widely used in industrial, automotive, and power management systems.

Integrated circuits combine a large number of transistors and other elementary electronic components in miniaturized form into a single physical device, that is designed for a specific purpose or function and characterized by its performance of that function rather than by the behavior of its component pieces. Examples include microcontrollers, battery monitors and charge controllers, analog to digital converters, operational amplifiers, logic gates, voltage regulators, gate drivers, motro controllers, and others.

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