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AS4C8M16SA-6TCN

DRAM SDRAM, 128Mb, 8M x 16, 3.3V, 54pin TSOP II, 166 Mhz, Commercial temp - Tray
Technical Specifications
Programmable Not Verified
Memory Type Volatile
Memory Format DRAM
Technology SDRAM
Memory Size 128Mbit
Memory Organization 8M x 16
Memory Interface Parallel
Clock Frequency 166 MHz
Write Cycle Time - Word, Page 12ns
Access Time 5 ns
Voltage - Supply 3V ~ 3.6V
Operating Temperature 0°C ~ 70°C (TA)
Mounting Type Surface Mount
Package / Case 54-TSOP (0.400", 10.16mm Width)
Supplier Device Package 54-TSOP II
Product Attributes
Packaging Tray
Standard Pack Qty108
Alternate / Replacement Parts
Alternate Packaging AS4C8M16SA-6TCNTR
Suggested Replacement
14,790
In Stock
Packaging: Tray
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✔ Global Shipping
✔ Genuine Parts
Test Report Available Upon Request click here to view sample report
Key Specifications
CategoryDRAM
RoHSRoHS Compliant
Lifecycle
Reported Lead Time 42 Days (from factory)
Documentation
Download Datasheet
Compliance & Export Information
Country Code
CNHTS 8542329000
USHTS 8542320002
JPHTS 854232021
KRHTS 8542321010
MXHTS 8542320201
ECCN EAR99
Product Overview

AS4C8M16SA-6TCN by Alliance Memory is a dram designed for reliable performance in electronic applications. It is widely used in industrial, automotive, and power management systems.

Integrated circuits combine a large number of transistors and other elementary electronic components in miniaturized form into a single physical device, that is designed for a specific purpose or function and characterized by its performance of that function rather than by the behavior of its component pieces. Examples include microcontrollers, battery monitors and charge controllers, analog to digital converters, operational amplifiers, logic gates, voltage regulators, gate drivers, motro controllers, and others.

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