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ALD212900SAL Advanced Linear Devices
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ALD212900SAL

MOSFETs Dual N-Ch EPAD FET Array VGS=0.0V
Technical Specifications
Technology MOSFET (Metal Oxide)
Configuration 2 N-Channel (Dual) Matched Pair
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 10.6V
Current - Continuous Drain (Id) @ 25°C 80mA
Rds On (Max) @ Id, Vgs 14Ohm
Vgs(th) (Max) @ Id 20mV @ 20µA
Gate Charge (Qg) (Max) @ Vgs -
Input Capacitance (Ciss) (Max) @ Vds 30pF @ 5V
Power - Max 500mW
Operating Temperature 0°C ~ 70°C (TJ)
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package 8-SOIC
📦 Product Attributes
Packaging Tube
Standard Pack Qty 50
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
5,563
Units In Stock
📦 Tube
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🔑 Key Specifications
Category MOSFETs
RoHS RoHS Compliant
Lifecycle
Lead Time 36 Days (from factory)
📄 Documentation
⬇ Download Datasheet
🌐 Compliance & Export
Country / Standard Code
CNHTS 8541210000
CAHTS 8541210000
USHTS 8541210095
JPHTS 8541210101
KRHTS 8541219000
TARIC 8542399000
MXHTS 8542399901
ECCN EAR99
Product Overview

ALD212900SAL by Advanced Linear Devices is a mosfets designed for reliable performance in electronic applications. It is widely used in industrial, automotive, and power management systems.

Discrete semiconductor products include individual transistors, diodes, and thyristors, as well as small arrays of such composed of two, three, four, or some other small number of similar devices within a single package. They are most commonly used for constructing circuits with considerable voltage or current stress, or for realizing very basic circuit functions.

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